Browsing by Subject "Silicon"
Now showing items 21-37 of 37
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Size-dependent charge transfer in blends of Pbs quantum dots with a low-gap silicon-bridged copolymer
(2013)The photophysics of bulk heterojunctions of a high-performance, low-gap silicon-bridged dithiophene polymer with oleic acid capped PbS quantum dots (QDs) are studied to assess the material potential for light harvesting ...
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Article
Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting
(2015)Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...
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Article
Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting
(2015)Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...
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Article
Solid-state synthesis and thermoelectric properties of Sb-doped Mg 2Si materials
(2013)Sb-doped magnesium silicide compounds have been prepared through ball milling and solid-state reaction. Materials produced were near-stoichiometric. The structural modifications have been studied with powder x-ray diffraction. ...
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Solid-state synthesis of Mg 2Si via short-duration ball-milling and low-temperature annealing
(2013)In this work, a short duration ball-milling of elemental Mg and Si followed by a thermal treatment is suggested in order to synthesize magnesium silicide via solid-state reaction. The formation of magnesium silicide was ...
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Article
Spark ignitable Ni-Al ball-milled powders for bonding applications
(2014)Ball milling of aluminum (Al) and nickel (Ni) particles at the NiAl composition can produce reactive powders with low spark ignition thresholds similar to magnetron sputtered multilayer foils (MFs). Such powders can replace ...
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Article
Structure, morphology, and photoluminescence of porous Si nanowires: Effect of different chemical treatments
(2013)The structure and light-emitting properties of Si nanowires (SiNWs) fabricated by a single-step metal-assisted chemical etching (MACE) process on highly boron-doped Si were investigated after different chemical treatments. ...
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Article
Study of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry
(2006)In this work, we have studied the changes in the optical properties on crystalline silicon implanted wafers (1 × 1013-1 × 1016 P+/cm2) using an extensive ellipsometric analysis. The effects of implantation energy (20-180 ...
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Surface-related states in oxidized silicon nanocrystals enhance carrier relaxation and inhibit auger recombination
(2008)We have studied ultrafast carrier dynamics in oxidized silicon nanocrystals (NCs) and the role that surface-related states play in the various relaxation mechanisms over a broad range of photon excitation energy corresponding ...
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Synthesis and characterization of star polymers and cross-linked star polymer model networks containing a novel, silicon-based, hydrolyzable cross-linker
(2004)An acid-labile dimethacrylate cross-linker, dimethyldi(methacryloyloxy-1-ethoxy)silane (DMDMAES), was synthesized by the reaction of 2-hydroxyethyl methacrylate (HEMA) and dichlorodimethylsilane in the presence of ...
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Article
Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition
(2009)Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
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Article
Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition
(2009)Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
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Article
Thermal oxidation and facet-formation mechanisms of Si nanowires
(2014)Silicon nanowires were grown along the [111] direction on Si(001) by the vapor-liquid-solid mechanism using 1 nm Au as a catalyst. They were subsequently oxidized at 900 °C for 60 min, 120 min and 180 min, which lead to ...
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Thermoelectric properties of Mg2Si coatings deposited by pack cementation assisted process on heavily doped Si substrates
(2014)This work presents a study of structural and thermoelectric properties of Mg2Si coatings deposited on heavily doped p- and n-type Si substrates, at 650 C. The as-grown layers were smooth and uniform in thickness without ...
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Ultrafast transient photoinduced absorption in silicon nanocrystals: Coupling of oxygen-related states to quantized sublevels
(2007)The authors have studied transient photoinduced absorption in single monolayers of oxidized silicon nanocrystals. Transient photoinduced absorption measurements along with optical absorption and photoluminescence (PL) ...
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Article
Well-defined fluoro- and carbazole-containing diblock copolymers: Synthesis, characterization and immobilization onto Au-coated silicon surfaces
(2012)A series of well-defined diblock copolymers consisting of 2-(N-carbazolyl)ethyl methacrylate (CbzEMA) and 2,2,3,3,4,4,4-heptafluorobutyl methacrylate (HFBMA) (CbzEMAx-b-HFBMAy) was synthesized by Reversible Addition-Fragmentation ...
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Article
Well-defined fluoro- and carbazole-containing diblock copolymers: Synthesis, characterization and immobilization onto Au-coated silicon surfaces
(2012)A series of well-defined diblock copolymers consisting of 2-(N-carbazolyl)ethyl methacrylate (CbzEMA) and 2,2,3,3,4,4,4-heptafluorobutyl methacrylate (HFBMA) (CbzEMAx-b-HFBMAy) was synthesized by Reversible Addition-Fragmentation ...