Browsing by Author "Mihailescu, C. N."

Now showing items 1-14 of 14

    • Article  

      Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films 

      Mihailescu, C. N.; Symeou, E.; Svoukis, E.; Negrea, R. F.; Ghica, C.; Teodorescu, V.; Tanase, L. C.; Negrila, C.; Giapintzakis, John (2018)
      Controlling the semiconductor-to-metal transition temperature in epitaxial VO2 thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects ...
    • Article  

      Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Luculescu, C. R.; Florini, N.; Komninou, Ph; Kioseoglou, J.; Othonos, Andreas S. (2014)
      Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by ...
    • Article  

      Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Luculescu, C. R.; Florini, N.; Komninou, Ph; Kioseoglou, J.; Othonos, A. (2014)
      Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by ...
    • Article  

      Data storage applications based on LiCoO2 thin films grown on Al2O3 and Si substrates 

      Svoukis, E.; Mihailescu, C. N.; Mai, V. H.; Schneegans, O.; Breza, K.; Lioutas, C.; Giapintzakis, John (2015)
      In this study, LiCoO2 thin films were investigated for data storage applications based on scanning probe mediated approaches. LiCoO2, compared to other materials proposed for scanning probe mediated nanoscale patterning, ...
    • Article  

      The Effect of Ge on Mg2Si0.6−x Sn0.4Ge x Materials 

      Vlachos, N.; Hatzikraniotis, E.; Mihailescu, C. N.; Giapintzakis, John; Kyratsi, Theodora (2014)
      In this work, we investigate the influence of the introduction of Ge on the thermoelectric properties of Bi-doped quaternary Mg2Si0.6−x Sn0.4Ge x alloys. Mg2Si0.58−x Sn0.4Bi0.02Ge x materials were fabricated by a low ...
    • Article  

      Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Othonos, Andreas S.; Travlos, A.; Luculescu, C. R. (2015)
      Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
    • Article  

      Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Travlos, A.; Luculescu, C. R. (2015)
      Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
    • Article  

      Growth and structural characterization of orthorhombic and tetragonal SrCuO2 thin films 

      Mihailescu, C. N.; Pasuk, I.; Athanasopoulos, G. I.; Luculescu, C.; Socol, M.; Saint-Martin, R.; Revcolevschi, A.; Giapintzakis, John (2013)
      Epitaxial SrCuO2 thin films were grown on (0 0 1) SrTiO 3 substrates by pulsed laser deposition using a stoichiometric target. X-ray diffraction indicated that the SrCuO2 films undergo a structural phase transition as a ...
    • Article  

      Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery 

      Mai, V. H.; Moradpour, A.; Senzier, P. A.; Pasquier, C.; Wang, K.; Rozenberg, M. J.; Giapintzakis, John; Mihailescu, C. N.; Orfanidou, C. M.; Svoukis, E.; Breza, A.; Lioutas, C. B.; Franger, S.; Revcolevschi, A.; Maroutian, T.; Lecoeur, P.; Aubert, P.; Agnus, G.; Salot, R.; Albouy, P. A.; Weil, R.; Alamarguy, D.; March, K.; Jomard, F.; Chrétien, P.; Schneegans, O. (2015)
      The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance ...
    • Article  

      Origin of the stabilization of the metastable tetragonal high-pressure phase in SrCuO2 thin films grown on SrTiO3 substrates by pulsed laser deposition 

      Mihailescu, C. N.; Pasuk, I.; Straticiuc, M.; Nita, C. R.; Pantelica, D.; Giapintzakis, John (2014)
      In this work we have systematically investigated the evolution of structure and stoichiometry in SrCuO2 films grown on TiO2-terminated SrTiO3 substrates as a function of the substrate temperature. Depending on the growth ...
    • Article  

      Picosecond ultrafast pulsed laser deposition of SrTiO3 

      Pervolaraki, M.; Mihailescu, C. N.; Luculescu, C. R.; Ionescu, P.; Dracea, M. D.; Pantelica, D.; Giapintzakis, John (2015)
      SrTiO3 particle-composed films were grown on Si substrates via picosecond ultrafast pulsed laser deposition. We have investigated the effect of laser pulse repetition rate (0.2-8.2 MHz) and fluence (0.079-1.57 J cm-2) on ...
    • Article  

      Surface passivation and conversion of SnO2 to SnS2 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Othonos, Andreas S.; Luculescu, C. R. (2015)
      SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
    • Article  

      Surface passivation and conversion of SnO2 to SnS2 nanowires 

      Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Luculescu, C. R. (2015)
      SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
    • Article  

      Thermoelectric properties of Bi0.5Sb1.5Te3 thin films grown by pulsed laser deposition 

      Symeou, E.; Pervolaraki, M.; Mihailescu, C. N.; Athanasopoulos, G. I.; Papageorgiou, C.; Kyratsi, Theodora; Giapintzakis, John (2015)
      We report on the pulsed laser deposition of p-type Bi0.5Sb1.5Te3 thin films onto fused silica substrates by ablation of dense targets of Bi0.5Sb1.5Te3 with an excess of 1 wt% Te. We investigated the effect of film thickness, ...