Browsing by Subject "KINETICS"
Now showing items 1-9 of 9
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Article
Composition Profiles and Time Evolution of Buried Marble Patinas by La-Icp-Ms and Laser-Induced Micro-Photo-Luminescence
(2010)The present work aims to study surface composition profiles on buried marbles as well as their time evolution. Fifty samples from gravestones, buried for up to 80 years, were analysed by laser-induced photoluminescence and ...
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Article
High-temperature photomodulated thermoreflectance measurements on phosphorus implanted and annealed silicon wafers
(2003)Photomodulated thermoreflectance measurements between 300 and 650 K on phosphorus implanted and annealed silicon wafers are reported. The change of the photothermal amplitude and phase as a function of temperature is ...
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Article
Infrared-Spectroscopy and Electrical Characterization of Phosphorus Implanted and Annealed Silicon Layers
(1995)Fourier transform infrared spectroscopy has been carried out in the spectral range of 2.5 to 25 mu m, both in transmission and reflection mode on phosphorus-implanted, non-annealed and annealed silicon layers. Complementary ...
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Optical Spectroscopy on Implanted and Annealed Silicon-Wafers - Plasma Resonance Wavelength
(1994)A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of ...
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Article
Photoluminescence and Raman scattering of ion implanted semiconductors. Influence of annealing
(1997)
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Article
Raman-Spectroscopy and Spreading Resistance Analysis of Phosphorus Implanted and Annealed Silicon
(1994)Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies ...
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Article
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Article
Ultrafast dynamics in phosphorus-implanted silicon wafers: The effects of annealing
(2002)Carrier relaxation in phosphorus-implanted silicon wafers (10(16) P+/cm(2)) annealed at different temperatures ranging from 350 to 1100 degreesC is investigated by near-infrared ultrafast time-resolved reflectivity ...
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Doctoral Thesis Open Access
Μελέτη της δραστικότητας και κινητικής ρευστότητας σκληρών μεταλλοϊόντων με ηλεκτροχημικά ενεργούς υποκαταστάτες
(Πανεπιστήμιο Κύπρου, Σχολή Θετικών και Εφαρμοσμένων Επιστημών / University of Cyprus, Faculty of Pure and Applied Sciences, 2006-06)Αντίδραση μη όξο δικετονικών ενώσεων του βαναδίου(IV) με ετεροαζοαρωματικούς υποκατάστατες είχε ως αποτέλεσμα την αναγωγή των ενώσεων του βαναδίου(VI) σε οκταεδρικές ενώσεις του βαναδίου(III) με ταυτόχρονη οξείδωση της ...