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Modeling of thermal conductivity in high performing thermoelectric materials

dc.contributor.authorHatzikraniotis, E.en
dc.contributor.authorKyratsi, Theodoraen
dc.contributor.authorParaskevopoulos, K. M.en
dc.contributor.editorX, Ziannien
dc.contributor.editorK, Termentzidisen
dc.contributor.editorD, Lacroixen
dc.creatorHatzikraniotis, E.en
dc.creatorKyratsi, Theodoraen
dc.creatorParaskevopoulos, K. M.en
dc.date.accessioned2019-05-06T12:23:42Z
dc.date.available2019-05-06T12:23:42Z
dc.date.issued2017
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48408
dc.description.abstractThe enhanced TE-performance in Mg2Si-Mg2Sn based pseudo-binaries is presented, which is attributed to low thermal conductivity. Sn-Si alloying, reduces the lattice thermal conductivity due to mass fluctuation. Furthermore, miscibility gap in the Sn-Si substitution causes the formation of composites, with Si-rich and Sn-rich phases, which span from mm to nm scale, and these nano-inclusions reduce further lattice thermal conductivity.en
dc.language.isoengen
dc.publisherInstitute of Physics Publishingen
dc.sourceJournal of Physics: Conference Seriesen
dc.subjectHeat transferen
dc.subjectNanotechnologyen
dc.subjectThermal conductivityen
dc.subjectThermoelectricityen
dc.subjectSiliconen
dc.subjectCrystal latticesen
dc.subjectHeat sinksen
dc.subjectLattice thermal conductivityen
dc.subjectLow thermal conductivityen
dc.subjectMiscibility gapen
dc.subjectNano inclusionen
dc.subjectPseudo-binariesen
dc.subjectThermo-Electric materialsen
dc.subjectTinen
dc.titleModeling of thermal conductivity in high performing thermoelectric materialsen
dc.typeinfo:eu-repo/semantics/conferenceObject
dc.identifier.doi10.1088/1742-6596/785/1/012004
dc.description.volume785
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeConference Objecten
dc.contributor.orcidKyratsi, Theodora [0000-0003-2916-1708]
dc.gnosis.orcid0000-0003-2916-1708


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