| dc.contributor.author | Karageorgou, E. | en |
| dc.contributor.author | Zervos, Matthew | en |
| dc.contributor.author | Othonos, A. | en |
| dc.creator | Karageorgou, E. | en |
| dc.creator | Zervos, Matthew | en |
| dc.creator | Othonos, A. | en |
| dc.date.accessioned | 2019-05-06T12:23:49Z | |
| dc.date.available | 2019-05-06T12:23:49Z | |
| dc.date.issued | 2014 | |
| dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48454 | |
| dc.description.abstract | SnO2 and Sn:In2O3 nanowires were grown on Si(001), and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current-voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires were obtained by depositing copper and post-growth processing under H2S between 100 and 500°C. These consist mainly of tetragonal rutile SnO2 and cubic bixbyite In2O3. We observe photoluminescence at 3.65 eV corresponding to band edge emission from SnO2 quantum dots in the Cu2SnS3/SnO2 nanowires due to electrostatic confinement. The Cu2SnS3/SnO2 nanowires assemblies had resistances of 100 Ω similar to CuInS2/In2O3 nanowires which exhibited photoluminescence at 3.0 eV. © 2014 Author(s). | en |
| dc.language.iso | eng | en |
| dc.source | APL Materials | en |
| dc.title | Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires | en |
| dc.type | info:eu-repo/semantics/article | |
| dc.identifier.doi | 10.1063/1.4901295 | |
| dc.description.volume | 2 | |
| dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
| dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
| dc.type.uhtype | Article | en |
| dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
| dc.gnosis.orcid | 0000-0002-6321-233X | |
