dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Mihailescu, C. N. | en |
dc.contributor.author | Giapintzakis, John | en |
dc.contributor.author | Othonos, A. | en |
dc.contributor.author | Travlos, A. | en |
dc.contributor.author | Luculescu, C. R. | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Mihailescu, C. N. | en |
dc.creator | Giapintzakis, John | en |
dc.creator | Othonos, A. | en |
dc.creator | Travlos, A. | en |
dc.creator | Luculescu, C. R. | en |
dc.date.accessioned | 2019-05-06T12:24:53Z | |
dc.date.available | 2019-05-06T12:24:53Z | |
dc.date.issued | 2015 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48969 | |
dc.description.abstract | Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing the Sn:In2O3 nanowires to H2S at 300 °C but also cubic bixbyite In2O3, which remains dominant, and the emergence of rhombohedral In2(SO4)3 at 400 °C. The resultant nanowires maintain their metallic-like conductivity, and exhibit photoluminescence at 3.4 eV corresponding to band edge emission from In2O3. In contrast, Sn:In2O3 nanowires grown on glass at 500 °C can be treated under H2S only below 200 °C which is important for the fabrication of Cu2S/Sn:In2O3 core-shell p-n junctions on low-cost transparent substrates such as glass suitable for quantum dot-sensitized solar cells. © 2015, Zervos et al. | en |
dc.language.iso | eng | en |
dc.source | Nanoscale Research Letters | en |
dc.subject | Optical properties | en |
dc.subject | Glass | en |
dc.subject | Nanowires | en |
dc.subject | Tin | en |
dc.subject | Vapor-liquid-solid mechanism | en |
dc.subject | Band-edge emissions | en |
dc.subject | Semiconductor quantum dots | en |
dc.subject | P-n junction | en |
dc.subject | Semiconductor junctions | en |
dc.subject | Exposed to | en |
dc.subject | Tin oxides | en |
dc.subject | Core shell | en |
dc.subject | Indium tin oxide | en |
dc.subject | Quantum dot-sensitized solar cells | en |
dc.subject | Sn-doped in | en |
dc.subject | Sulfur | en |
dc.title | Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1186/s11671-015-0995-z | |
dc.description.volume | 10 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.contributor.orcid | Giapintzakis, John [0000-0002-7277-2662] | |
dc.gnosis.orcid | 0000-0002-6321-233X | |
dc.gnosis.orcid | 0000-0002-7277-2662 | |