dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Lathiotakis, N. | en |
dc.contributor.author | Kelaidis, N. | en |
dc.contributor.author | Othonos, Andreas | en |
dc.contributor.author | Tanasa, E. | en |
dc.contributor.author | Vasile, E. | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Lathiotakis, N. | en |
dc.creator | Kelaidis, N. | en |
dc.creator | Othonos, Andreas | en |
dc.creator | Tanasa, E. | en |
dc.creator | Vasile, E. | en |
dc.date.accessioned | 2021-01-27T10:17:22Z | |
dc.date.available | 2021-01-27T10:17:22Z | |
dc.date.issued | 2019 | |
dc.identifier.issn | 2516-0230 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/63663 | |
dc.description.abstract | Epitaxial, highly ordered Sb:SnO2 nanowires were grown by the vapor–liquid–solid mechanism on m-, r- and a-Al2O3 between 700 °C and 1000 °C using metallic Sn and Sb with a mass ratio of Sn/Sb = 0.15 ± 0.05 under a flow of Ar and O2 at 1 ± 0.5 mbar. We find that effective doping and ordering can only be achieved inside this narrow window of growth conditions. The Sb:SnO2 nanowires have the tetragonal rutile crystal structure and are inclined along two mutually perpendicular directions forming a rectangular mesh on m-Al2O3 while those on r-Al2O3 are oriented in one direction. The growth directions do not change by varying the growth temperature between 700 °C and 1000 °C but the carrier density decreased from 8 × 1019 cm−3 to 4 × 1017 cm−3 due to the re-evaporation and limited incorporation of Sb donor impurities in SnO2. The Sb:SnO2 nanowires on r-Al2O3 had an optical transmission of 80% above 800 nm and displayed very long photoluminescence lifetimes of 0.2 ms at 300 K. We show that selective area location growth of highly ordered Sb:SnO2 nanowires is possible by patterning the catalyst which is important for the realization of novel nanoscale devices such as nanowire solar cells. | en |
dc.language.iso | en | en |
dc.source | Nanoscale Advances | en |
dc.source.uri | https://pubs.rsc.org/en/content/articlelanding/2019/na/c9na00074g | |
dc.title | Epitaxial highly ordered Sb:SnO2 nanowires grown by the vapor liquid solid mechanism on m-, r- and a-Al2O3 | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1039/C9NA00074G | |
dc.description.volume | 1 | |
dc.description.issue | 5 | |
dc.description.startingpage | 1980 | |
dc.description.endingpage | 1990 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.source.abbreviation | Nanoscale Adv. | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.contributor.orcid | Othonos, Andreas [0000-0003-0016-9116] | |
dc.contributor.orcid | Vasile, E. [0000-0002-5868-1932] | |
dc.contributor.orcid | Lathiotakis, N. [0000-0002-5589-7930] | |
dc.gnosis.orcid | 0000-0002-6321-233X | |
dc.gnosis.orcid | 0000-0003-0016-9116 | |
dc.gnosis.orcid | 0000-0002-5868-1932 | |
dc.gnosis.orcid | 0000-0002-5589-7930 | |