Browsing by Author "Kioseoglou, G."
Now showing items 1-11 of 11
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Article
Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier
Hanbicki, A. T.; Van't Erve, O. M. J.; Magno, R.; Kioseoglou, G.; Li, C. H.; Jonker, B. T.; Itskos, Grigorios; Mallory, R.; Yasar, M.; Petrou, Athos Chariton (2003)Electrical injection through a reverse biased Fe/AlGaAs Schottky contact was used to obtain electron-spin polarizations in a GaAs quantum well. The analysis of the transport data using the Rowell criteria shows that ...
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Article
Effects of the heteroepitaxial interface on spin injection in Fe/AlGaAs
Zega, T. J.; Stroud, R. M.; Hanbicki, A. T.; Kioseoglou, G.; Van't Erve, O. M. J.; Li, C. H.; Jonker, B. T.; Itskos, Grigorios; Mallory, R.; Yasar, M.; Petrou, Athos Chariton (2004)
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Article
Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor
Hanbicki, A. T.; Jonker, B. T.; Itskos, Grigorios; Kioseoglou, G.; Petrou, Athos Chariton (2002)We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed ...
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Article
Electrical spin injection across air-exposed epitaxially regrown semiconductor interfaces
Park, Y. D.; Jonker, B. T.; Bennett, B. R.; Itskos, Grigorios; Furis, M.; Kioseoglou, G.; Petrou, Athos Chariton (2000)We have fabricated spin-polarized light-emitting diode structures via epitaxial regrowth of Znl-xMnxSe on air-exposed surfaces of AlyGal-yAs/GaAs quantum wells. No passivation procedures were used to protect or prepare the ...
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Conference Object
Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4 / AlGaAs / GaAs
Jonker, B. T.; Hanbicki, A. T.; Kioseoglou, G.; Li, C. H.; Stroud, R. M.; Sullivan, J. M.; Erwin, S. C.; Lüpke, G.; Zhao, H. B.; Ren, Y. H.; Sun, B.; Itskos, Grigorios; Mallory, R.; Yasar, M.; Petrou, Athos Chariton (2003)The electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure were discussed. The electrical spin injection from spin-LED structures showed defect-dominated electroluminescence. ...
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Conference Object
Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4/AlGaAs/GaAs
Jonker, B. T.; Hanbicki, A. T.; Kioseoglou, G.; Li, C. H.; Stroud, R. M.; Sullivan, J. M.; Erwin, S. C.; Lüpke, G.; Zhao, H. B.; Ren, Y. H.; Sun, B.; Itskos, Grigorios; Mallory, R.; Yasar, M.; Petrou, Athos Chariton (Institute of Electrical and Electronics Engineers Inc., 2003)Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr2Se4-AlGaAs-GaAs are studied. Epitaxially grown CdCr2Se4 films exhibit hysteresis behavior with significant remanence, ...
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Conference Object
Electrical spin injection from a magnetic schottky tunnel contact into a semiconductor
Jonker, B. T.; Hanbicki, A. T.; Itskos, Grigorios; Kioseoglou, G.; Petrou, Athos Chariton (2002)A report on the electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor was presented. The temperature dependence of the optical polarization and corresponding spin injection efficiency was ...
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Article
Phonon-assisted recombination in Fe-based spin LEDs
Mallory, R.; Yasar, M.; Itskos, Grigorios; Petrou, Athos Chariton; Kioseoglou, G.; Hanbicki, A. T.; Li, C. H.; Van't Erve, O. M. J.; Jonker, B. T.; Shen, M.; Saikin, S. (2006)The electroluminescence (EL) spectra from Fe AlGaAs (n) GaAs AlGaAs (p) spin LEDs contain an e1 h1 excitonic feature
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Article
Quantifying electrical spin injection: Component-resolved electroluminescence from spin-polarized light-emitting diodes
Jonker, B. T.; Hanbicki, A. T.; Park, Y. D.; Itskos, Grigorios; Furis, M.; Kioseoglou, G.; Petrou, Athos Chariton; Wei, X. (2001)The spin-polarized light-emitting diode (spin-LED) is a very effective tool for accurately quantifying electrical spin injection in a model independent manner. We resolve and identify various components which occur in the ...
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Article
Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes
Stroud, R. M.; Hanbicki, A. T.; Park, Y. D.; Kioseoglou, G.; Petukhov, A. G.; Jonker, B. T.; Itskos, Grigorios; Petrou, Athos Chariton (2002)The effects of the interface microstructure on spin-injection efficiency in Zn1-xMnxSe/AlyGa1-yAs-GaAs spin-polarized light-emitting diodes (spin-LEDs) were studied. It was shown that the quantum well (QW) spin polarization ...
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Conference Object
A schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor
Hanbicki, A. T.; Stroud, R. M.; Magno, R.; Kioseoglou, G.; Li, C. H.; Jonker, B. T.; Itskos, Grigorios; Mallory, R.; Yasar, M.; Petrou, Athos Chariton (2003)A study was performed on a Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor. It was reported that spin injection from a Fe Schottky contact produced a spin polarization ...