Browsing by Subject "Oxide minerals"
Now showing items 1-13 of 13
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Article
Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films
(2018)Controlling the semiconductor-to-metal transition temperature in epitaxial VO2 thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects ...
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Article
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Article
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Article
Comparative study of La-Sr-Fe-O perovskite-type oxides prepared by ceramic and surfactant methods over the CH4 and H2 lean-deNOx
(2009)Mixed oxides of the general formula La0.8Sr0.2FeO3-x were prepared by ceramic and surfactant methods and tested towards the NO/H2/O2 and NO/CH4/O2 lean-deNOx reactions in the 200-450 °C range. The materials were characterized ...
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Article
Femtosecond carrier dynamics in In 2O 3 nanocrystals
(2009)We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
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Article
Femtosecond carrier dynamics in In 2O 3 nanocrystals
(2009)We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
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Article
Magnetoresistance in LaNi1-xCoxO3 (0.3≤x≤0.6)
(2010)We report on a detailed study of the electrical resistivity and the magnetoresistance of the metallic members of the LaNi1-xCoxO3 series with 0.3≤x≤0.6. The low-temperature resistivity of the compounds with 0.3≤x≤0.5 ...
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Article
Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting
(2015)Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...
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Article
Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting
(2015)Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...
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Article
Surface passivation and conversion of SnO2 to SnS2 nanowires
(2015)SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
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Article
Surface passivation and conversion of SnO2 to SnS2 nanowires
(2015)SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
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Article
A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...
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A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...