Browsing by Subject "Photoluminescence spectrum"
Now showing items 1-9 of 9
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Article
InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
(2006)InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
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Article
An investigation into the conversion of In2O3 into InN nanowires
(2011)Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...
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Article
An investigation into the conversion of In2O3 into InN nanowires
(2011)Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...
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Article
The nitridation of ZnO nanowires
(2012)ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
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Article
The nitridation of ZnO nanowires
(2012)ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
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Article
Synthesis of hybrid polymethacrylate-noble metal (M = Au, Pd) nanoparticles for the growth of metal-oxide semiconductor nanowires
(2012)Metal-oxide semiconductor nanowires (NWs) such as ZnO, β-Ga 2O 3 and SnO 2 with diameters of tens of nanometres and lengths of many micrometres have been grown using micellar nanohybrids consisting of methacrylate-based ...
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Article
Synthesis of hybrid polymethacrylate-noble metal (M = Au, Pd) nanoparticles for the growth of metal-oxide semiconductor nanowires
(2012)Metal-oxide semiconductor nanowires (NWs) such as ZnO, β-Ga 2O 3 and SnO 2 with diameters of tens of nanometres and lengths of many micrometres have been grown using micellar nanohybrids consisting of methacrylate-based ...
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Article
A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...
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Article
A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...