Browsing by Subject "Spin polarization"

Now showing items 1-8 of 8

    • Article  

      Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor 

      Hanbicki, A. T.; Jonker, B. T.; Itskos, Grigorios; Kioseoglou, G.; Petrou, Athos Chariton (2002)
      We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed ...
    • Conference Object  

      Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4/AlGaAs/GaAs 

      Jonker, B. T.; Hanbicki, A. T.; Kioseoglou, G.; Li, C. H.; Stroud, R. M.; Sullivan, J. M.; Erwin, S. C.; Lüpke, G.; Zhao, H. B.; Ren, Y. H.; Sun, B.; Itskos, Grigorios; Mallory, R.; Yasar, M.; Petrou, Athos Chariton (Institute of Electrical and Electronics Engineers Inc., 2003)
      Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure of CdCr2Se4-AlGaAs-GaAs are studied. Epitaxially grown CdCr2Se4 films exhibit hysteresis behavior with significant remanence, ...
    • Conference Object  

      Highly efficient spin filtering of ballistic electrons in hybrid spin valve/semiconductor structures 

      Steinmuller, S. J.; Trypiniotis, Theodossis; Hirohata, A.; Cho, W. S.; Lew, W. S.; Vaz, C. A. F.; Bland, J. A. C. (2004)
      The highly efficient spin filtering of ballistic electrons in hybrid spin valve/semiconductor (SC) structures was discussed. It was found that the photocurrent was dependent on the relative alignment of the light helicity ...
    • Article  

      Initial/final state selection of the spin polarization in electron tunneling across an epitaxial FeGaAs (001) interface 

      Kurebayashi, H.; Steinmuller, S. J.; Laloë, J. B.; Trypiniotis, Theodossis; Easton, S.; Ionescu, A.; Yates, J. R.; Bland, J. A. C. (2007)
      Spin dependent electron transport across epitaxial FeGaAs (001) interfaces has been investigated using photoexcitation techniques. Spin filtering is observed in the forward bias regime and its sign is switched by using ...
    • Article  

      Spin current depolarization under high electric fields in undoped InGaAs 

      Okamoto, N.; Kurebayashi, H.; Harii, K.; Kajiwara, Y.; Beere, H.; Farrer, I.; Trypiniotis, Theodossis; Ando, K.; Ritchie, D. A.; Barnes, C. H. W.; Saitoh, E. (2011)
      Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure ...
    • Article  

      Spin polarisation and anomalous Hall effect in NiMnSb films 

      Branford, W. R.; Roy, S. B.; Clowes, S. K.; Miyoshi, Y.; Bugoslavsky, Y. V.; Gardelis, S.; Giapintzakis, John; Cohen, L. F. (2004)
      NiMnSb has attracted a great deal of interest as a spin injector/detector in spintronic devices because it has a Curie temperature of 728 K and is predicted to be half-metallic (100% spin polarized). NiMnSb has been reported ...
    • Article  

      Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition 

      Gardelis, S.; Androulakis, J.; Giapintzakis, John; Monnereau, O.; Buckle, P. D. (2004)
      We report the growth of single-phase, stoichiometric polycrystalline thin films of the half-Heusler ferromagnet NiMnSb, predicted to be half-metallic, on single crystal InSb (100) substrates heated at 200°C by pulsed laser ...
    • Article  

      Synthesis and physical properties of arc melted NiMnSb 

      Gardelis, S.; Androulakis, J.; Migiakis, P.; Giapintzakis, John; Clowes, S. K.; Bugoslavsky, Y.; Branford, W. R.; Miyoshi, Y.; Cohen, L. F. (2004)
      The synthesis and physical properties of arc melted NiMnSb were studied using X-ray diffraction analysis. It was observed that the half metallicity in NiMnSb is supported by the integer saturation magnetization value at 5 ...