• Article  

      Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor 

      Hanbicki, A. T.; Jonker, B. T.; Itskos, Grigorios; Kioseoglou, G.; Petrou, Athos Chariton (2002)
      We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed ...
    • Article  

      Electric control of the spin Hall effect by intervalley transitions 

      Okamoto, N.; Kurebayashi, H.; Trypiniotis, Theodossis; Farrer, I.; Ritchie, D. A.; Saitoh, E.; Sinova, J.; Mašek, J.; Jungwirth, T.; Barnes, C. H. W. (2014)
      Controlling spin-related material properties by electronic means is a key step towards future spintronic technologies. The spin Hall effect (SHE) has become increasingly important for generating, detecting and using spin ...
    • Article  

      Numerical calculation model for spin-dependent transport of photoexcited electrons across Fe/GaAs(0 0 1) interfaces 

      Kurebayashi, H.; Trypiniotis, Theodossis; Lee, K.; Moutafis, C.; Easton, S.; Ionescu, A.; Bland, J. A. C.; Barnes, C. H. W. (2010)
      abs Spin-dependent transport of photogenerated electrons across Fe/GaAs(0 0 1) interfaces is calculated using a one-dimensional electron transport model. Creation of spin-polarized electrons by photoexcitation in this model ...
    • Article  

      Spin transport in germanium at room temperature 

      Shen, C.; Trypiniotis, Theodossis; Lee, K. Y.; Holmes, S. N.; Mansell, R.; Husain, M.; Shah, V.; Li, X. V.; Kurebayashi, H.; Farrer, I.; De Groot, C. H.; Leadley, D. R.; Bell, G.; Parker, E. H. C.; Whall, T.; Ritchie, D. A.; Barnes, C. H. W. (2010)
      Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent ...