Browsing Τμήμα Φυσικής / Department of Physics by Subject "Nanocrystals"
Now showing items 1-11 of 11
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Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires in quantum dot sensitized solar cells
(2017)Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires have been obtained via the deposition of Pb over Sn:In2O3 nanowires and post growth processing under H2S between 100 C-200 C and 300 C-500 C respectively. The ...
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Current Transport Properties of CuS/Sn:In2O3 versus CuS/SnO2 Nanowires and Negative Differential Resistance in Quantum Dot Sensitized Solar Cells
(2016)The structural, optical, and electrical transport properties of nanowires obtained by the deposition of Cu over Sn doped In2O3 and SnO2 nanowires followed by processing under H2S between 100 and 500°C have been investigated ...
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Femtosecond carrier dynamics in In 2O 3 nanocrystals
(2009)We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
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Lead halide perovskites and other metal halide complexes as inorganic capping ligands for colloidal nanocrystals
(2014)Lead halide perovskites (CH3NH3PbX3, where X = I, Br) and other metal halide complexes (MXn, where M = Pb, Cd, In, Zn, Fe, Bi, Sb) have been studied as inorganic capping ligands for colloidal nanocrystals. We present the ...
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Article
Long-Lived Hot Carriers in Formamidinium Lead Iodide Nanocrystals
(2017)The efficient harvesting of hot carrier energy in semiconductors is typically inhibited by their ultrafast thermalization process. Recently, highly promising experiments reported on the slowdown of the intraband relaxation ...
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Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In
(2009)Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low ...
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Article
Quantum confinement and interface structure of Si nanocrystals of sizes 3-5 nm embedded in a-SiO2
(2007)Spectroscopic ellipsometry and Monte Carlo simulations are employed to answer the fundamental question whether the energy gaps of Si nanocrystals with sizes in the range of 3-5 nm, which are embedded in amorphous silica, ...
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Structure, morphology, and photoluminescence of porous Si nanowires: Effect of different chemical treatments
(2013)The structure and light-emitting properties of Si nanowires (SiNWs) fabricated by a single-step metal-assisted chemical etching (MACE) process on highly boron-doped Si were investigated after different chemical treatments. ...
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Surface-related states in oxidized silicon nanocrystals enhance carrier relaxation and inhibit auger recombination
(2008)We have studied ultrafast carrier dynamics in oxidized silicon nanocrystals (NCs) and the role that surface-related states play in the various relaxation mechanisms over a broad range of photon excitation energy corresponding ...
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Ultrafast time-resolved spectroscopy of Si nanocrystals embedded in SiO2 matrix
(2009)In this work, we present a comprehensive study of ultrafast transient photoinduced absorption of silicon nanocrystals (NCs) embedded in SiO2 matrix. The samples under investigation are single monolayers of Si-NCs embedded ...
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Ultrafast transient photoinduced absorption in silicon nanocrystals: Coupling of oxygen-related states to quantized sublevels
(2007)The authors have studied transient photoinduced absorption in single monolayers of oxidized silicon nanocrystals. Transient photoinduced absorption measurements along with optical absorption and photoluminescence (PL) ...