• Article  

      Gallium hydride vapor phase epitaxy of GaN nanowires 

      Zervos, Matthew; Othonos, Andreas S. (2011)
      Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
    • Article  

      The nitridation of ZnO nanowires 

      Zervos, Matthew; Karipi, C.; Othonos, Andreas S. (2012)
      ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...