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Pulsed laser deposition of highly textured La 5Ca 9Cu 24O 41 films on SrLaAlO 4 (1 0 0) and Gd 3Ga 5O 12 (1 0 0) substrates
(2012)
The growth of La 5Ca 9Cu 24O 41 thin films on SrLaAlO 4 (1 0 0) and Gd 3Ga 5O 12 (1 0 0) substrates by pulsed laser deposition is reported in this paper. The influence of deposition process parameters, such as oxygen ...
Room temperature synthesis and high temperature frictional study of silver vanadate nanorods
(2010)
We report the room temperature (RT) synthesis of silver vanadate nanorods (consisting of mainly β-AgVO3) by a simple wet chemical route and their frictional study at high temperatures (HT). The sudden mixing of ammonium ...
Data storage applications based on LiCoO2 thin films grown on Al2O3 and Si substrates
(2015)
In this study, LiCoO2 thin films were investigated for data storage applications based on scanning probe mediated approaches. LiCoO2, compared to other materials proposed for scanning probe mediated nanoscale patterning, ...
Solvothermal synthesis, nanostructural characterization and gas cryo-adsorption studies in a metal–organic framework (IRMOF-1) material
(2017)
A nanoporous metal–organic framework material, exhibiting an IRMOF-1 type crystalline structure, was prepared by following a direct solvothermal synthesis approach, using zinc nitrate and terephthalic acid as precursors ...
A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)
SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...
The nitridation of ZnO nanowires
(2012)
ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition
(2010)
Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
(2011)
Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...