Influence of polarization field on the lasing properties of III-nitride quantum wells
Date
2006Source
Physica E: Low-Dimensional Systems and NanostructuresVolume
32Pages
558-561Google Scholar check
Keyword(s):
Metadata
Show full item recordAbstract
A theoretical investigation of the effect of polarization-induced fields on the optoelectronic properties of a 3 nm In0.2Ga0.8N/GaN single quantum well has been carried out via a self-consistent solution of Schrödinger-Poisson equations within the effective mass approximation. A pronounced, non-monotonic dependence of the threshold current density Jth on the well width has been found due to the enhanced quantum-confined Stark effect. Furthermore, the dependence of threshold current density on the value of the electric field in the well was examined. The threshold current in the 3 nm In0.2Ga0.8N/GaN well is higher by a factor of 2-5 compared to an identical well with zero internal field Eint. We show that the ability to reduce or eliminate internal fields appears attractive for the improvement of the optoelectronic properties of nitride-based laser diodes and one of achieving this is by using field-compensated quaternary InAlGaN/GaN heterostructures. © 2006 Elsevier B.V. All rights reserved.