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Low-temperature growth of NiMnSb thin films by pulsed-laser deposition

dc.contributor.authorGiapintzakis, Johnen
dc.contributor.authorGrigorescu, C.en
dc.contributor.authorKlini, A.en
dc.contributor.authorManousaki, A.en
dc.contributor.authorZorba, V.en
dc.contributor.authorAndroulakis, J.en
dc.contributor.authorViskadourakis, Z.en
dc.contributor.authorFotakis, C.en
dc.creatorGiapintzakis, Johnen
dc.creatorGrigorescu, C.en
dc.creatorKlini, A.en
dc.creatorManousaki, A.en
dc.creatorZorba, V.en
dc.creatorAndroulakis, J.en
dc.creatorViskadourakis, Z.en
dc.creatorFotakis, C.en
dc.date.accessioned2019-05-06T12:23:37Z
dc.date.available2019-05-06T12:23:37Z
dc.date.issued2002
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48362
dc.description.abstractWe report the growth of thin films of the ferromagnetic half-Heusler alloy NiMnSb by pulsed-laser deposition on Si (111) and polycrystalline InAs substrates. Highly crystalline films are grown using low substrate temperatures (190-210°C), without any postdeposition annealing. The structural, magnetic, and transport properties of the films are relatively consistent with those of the bulk NiMnSb used as target, which suggests that thin layers of this material grown by laser ablation could be used in multilayer structures as effective spin-polarized conducting layers. © 2002 American Institute of Physics.en
dc.language.isoengen
dc.sourceApplied Physics Lettersen
dc.subjectInAsen
dc.subjectPulsed laser depositionen
dc.subjectThin filmsen
dc.subjectDepositionen
dc.subjectSubstratesen
dc.subjectPolycrystallineen
dc.subjectPulsed lasersen
dc.subjectVapor depositionen
dc.subjectTransport propertiesen
dc.subjectCrystalline filmsen
dc.subjectConducting layersen
dc.subjectConductive filmsen
dc.subjectFilm preparationen
dc.subjectGrowth of thin filmsen
dc.subjectHalf-Heusler alloysen
dc.subjectIndium arsenideen
dc.subjectLow substrate temperatureen
dc.subjectLow temperature growthen
dc.subjectMultilayer filmsen
dc.subjectMultilayer structuresen
dc.subjectPost deposition annealingen
dc.subjectSi (1 1 1)en
dc.subjectSpin-polarizeden
dc.subjectThin layersen
dc.titleLow-temperature growth of NiMnSb thin films by pulsed-laser depositionen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1063/1.1469211
dc.description.volume80
dc.description.startingpage2716
dc.description.endingpage2718
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidGiapintzakis, John [0000-0002-7277-2662]
dc.description.totalnumpages2716-2718
dc.gnosis.orcid0000-0002-7277-2662


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