Modification of thermoelectric properties using insertion techniques
Date
1999Source
Materials Research Society Symposium - ProceedingsVolume
545Pages
149-154Google Scholar check
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In this work is presented the application insertion techniques for the modification of the performance of thermoelectric materials. The results indicate that in cases as in Bi2Se3 compounds where insertion of foreign species in the lattice is possible due to its particular crystal structure, the insertion technique could be proved a valuable easy to apply and cost effective, alternative to doping technique. The techniques can produce homogeneous materials with electronic and thermoelectric properties finely tuned.