Doping studies of n-type CsBi4Te6 thermoelectric materials
Ημερομηνία
2001Συγγραφέας
Lane, M. A.Ireland, J. R.
Brazis, P. W.
Kyratsi, Theodora
Chung, D. Y.
Kanatzidis, M. G.
Kannewurf, C. R.
Εκδότης
Affiliation: Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United StatesCorrespondence Address: Lane, M.A.
Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United States
Source
Proceedings - IEEE International Symposium on Circuits and SystemsVolume
4Pages
Z751-Z756Google Scholar check
Keyword(s):
Metadata
Εμφάνιση πλήρους εγγραφήςΕπιτομή
We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5% Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0% Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.