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Effect of antimony-doping and germanium on the highly efficient thermoelectric Si-rich-Mg2(Si,Sn,Ge) materials

dc.contributor.authorVlachos, N.en
dc.contributor.authorPolymeris, G. S.en
dc.contributor.authorManoli, M.en
dc.contributor.authorHatzikraniotis, E.en
dc.contributor.authorKhan, A. U.en
dc.contributor.authorLioutas, C. B.en
dc.contributor.authorStefanaki, E. C.en
dc.contributor.authorPavlidou, E.en
dc.contributor.authorParaskevopoulos, K. M.en
dc.contributor.authorGiapintzakis, Johnen
dc.contributor.authorKyratsi, Theodoraen
dc.creatorVlachos, N.en
dc.creatorPolymeris, G. S.en
dc.creatorManoli, M.en
dc.creatorHatzikraniotis, E.en
dc.creatorKhan, A. U.en
dc.creatorLioutas, C. B.en
dc.creatorStefanaki, E. C.en
dc.creatorPavlidou, E.en
dc.creatorParaskevopoulos, K. M.en
dc.creatorGiapintzakis, Johnen
dc.creatorKyratsi, Theodoraen
dc.date.accessioned2019-05-06T12:24:47Z
dc.date.available2019-05-06T12:24:47Z
dc.date.issued2017
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48919
dc.description.abstractTwo series of materials (a) Mg2Si0.55-ySn0.4Ge0.05Sby, 0 ≤ y ≤ 0.0175 and (b) Mg2Si0.5875-xSn0.4GexSb0.0125, 0 ≤ x ≤ 0.20 have been developed and studied in terms of structural features and thermoelectric properties/performance. The materials were prepared by a combination of low temperature reaction, ball milling process and hot pressing consolidation. Structure and composition across all relevant length scales was monitored by using XRD, SEM, TEM and HRTEM analysis and the influence of Sb-doping and Ge-addition on the phase structure and thermoelectric transport properties is presented. All different existing phases (Si-rich, Sn-rich and Ge-rich regions) contribute to the overall thermoelectric performance, having varying compositions in terms of the Bi dopant. Moreover, the coexistence of microstructural constituents and nanostructures formed in these materials is discussed explaining the enhancement of the TE behavior via the decrease of thermal conductivity. © 2017en
dc.language.isoengen
dc.sourceJournal of Alloys and Compoundsen
dc.subjectTemperatureen
dc.subjectMicrostructureen
dc.subjectThermal conductivityen
dc.subjectThermoelectricityen
dc.subjectBall millingen
dc.subjectMilling (machining)en
dc.subjectSiliconen
dc.subjectThermoelectric propertiesen
dc.subjectTinen
dc.subjectThermoelectric equipmenten
dc.subjectSilicidesen
dc.subjectBall milling processen
dc.subjectStructural featureen
dc.subjectHot pressingen
dc.subjectThermoelectric performanceen
dc.subjectGermaniumen
dc.subjectLow temperature reactionsen
dc.subjectMicro-structuralen
dc.subjectMultiphase materialsen
dc.subjectPhase structureen
dc.subjectThermoelectric transport propertiesen
dc.titleEffect of antimony-doping and germanium on the highly efficient thermoelectric Si-rich-Mg2(Si,Sn,Ge) materialsen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1016/j.jallcom.2017.04.267
dc.description.volume714
dc.description.startingpage502
dc.description.endingpage513
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidGiapintzakis, John [0000-0002-7277-2662]
dc.contributor.orcidKyratsi, Theodora [0000-0003-2916-1708]
dc.description.totalnumpages502-513
dc.gnosis.orcid0000-0002-7277-2662
dc.gnosis.orcid0000-0003-2916-1708


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