Hall Effect and Resistance Measurements on Implanted and Annealed Silicon Layers
Ημερομηνία
1990Source
Surface EngineeringPages
555-561Google Scholar check
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Εμφάνιση πλήρους εγγραφήςΕπιτομή
Abstract A study of the effects of the annealing temperature on arsenic implanted silicon layer (at high dose and energy) is reported. Hall effect and resistance measurements, at room temperature (300 K) have been employed to characterize arsenic-implanted non-annealed and annealed (200–1100° C) silicon films. This technique allows one to probe the annihilation processes of damage layer defects as a function of annealing conditions. A significant modification of the carrier scattering mechanism occurs for annealing ...