dc.contributor.author | Hanbicki, A. T. | en |
dc.contributor.author | Jonker, B. T. | en |
dc.contributor.author | Itskos, Grigorios | en |
dc.contributor.author | Kioseoglou, G. | en |
dc.contributor.author | Petrou, Athos Chariton | en |
dc.creator | Hanbicki, A. T. | en |
dc.creator | Jonker, B. T. | en |
dc.creator | Itskos, Grigorios | en |
dc.creator | Kioseoglou, G. | en |
dc.creator | Petrou, Athos Chariton | en |
dc.date.accessioned | 2019-12-02T15:30:29Z | |
dc.date.available | 2019-12-02T15:30:29Z | |
dc.date.issued | 2002 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58711 | |
dc.description.abstract | We report electrical spin injection from a ferromagnetic metal contact into a semiconductor light emitting diode structure with an injection efficiency of 30% which persists to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine, emitting circularly polarized light, and the quantum selection rules relating the optical and carrier spin polarizations provide a quantitative, model-independent measure of injection efficiency. This demonstrates that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration of spin transport into semiconductor processing technology. © 2002 American Institute of Physics. | en |
dc.source | Applied Physics Letters | en |
dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-79956059593&doi=10.1063%2f1.1449530&partnerID=40&md5=3c26c263023bfbdb28dbaf5a981c4e5b | |
dc.subject | Room temperature | en |
dc.subject | Spin polarization | en |
dc.subject | Light emitting diodes | en |
dc.subject | Circularly polarized light | en |
dc.subject | Schottky barrier diodes | en |
dc.subject | Barrier contacts | en |
dc.subject | Carrier spin polarization | en |
dc.subject | Electrical spin injection | en |
dc.subject | Ferromagnetic metal | en |
dc.subject | Injection efficiency | en |
dc.subject | Magnetic metals | en |
dc.subject | Reverse bias | en |
dc.subject | Schottky barriers | en |
dc.subject | Selection Rules | en |
dc.subject | Semiconductor processing technologies | en |
dc.subject | Spin transport | en |
dc.subject | Spin-polarized electrons | en |
dc.subject | Tunnel barrier | en |
dc.title | Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1063/1.1449530 | |
dc.description.volume | 80 | |
dc.description.issue | 7 | |
dc.description.startingpage | 1240 | |
dc.description.endingpage | 1242 | |
dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
dc.author.department | Τμήμα Φυσικής / Department of Physics | |
dc.type.uhtype | Article | en |
dc.description.notes | <p>Cited By :594</p> | en |
dc.source.abbreviation | Appl.Phys.Lett. | en |
dc.contributor.orcid | Itskos, Grigorios [0000-0003-3971-3801] | |
dc.gnosis.orcid | 0000-0003-3971-3801 | |