A schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor
Date
2003Author
Hanbicki, A. T.Stroud, R. M.
Magno, R.
Kioseoglou, G.
Li, C. H.
Jonker, B. T.
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Mallory, R.
Yasar, M.
Petrou, Athos Chariton
Source
Digests of the Intermag ConferenceIntermag 2003: International Magnetics Conference
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A study was performed on a Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor. It was reported that spin injection from a Fe Schottky contact produced a spin polarization of 32% in an AlGaAs/GaAs quantum well. The atomic structure of the spin injecting interface was examined with transmission electron microscopy (TEM).