Photothermal Reflectance Investigation of Implanted Silicon
Abstract
ABSTRACT Silicon films damaged by ion implantation have been examined using the Photothermal Reflectance (PTR) technique. Data are presented on the sensitivity of this method to the implant parameters such as dose and species, and on the dependence on thermal annealing. It has been shown that the technique provides much valuable information about the state of the implanted layer, and is a sensitive probe for monitoring the annihilation of the induced damage as a function of the annealing temperature. The ...