Magnetic and structural properties of stoichiometric thin Fe 3Si/GaAs(0 0 1) films
Date
2005Author
Ionescu, A.Vaz, C. A. F.
Trypiniotis, Theodossis
Gürtler, C. M.
Vickers, M. E.
García-Miquel, H.
Bland, J. A. C.
Source
Journal of Magnetism and Magnetic MaterialsVolume
286Issue
SPEC. ISS.Pages
72-76Google Scholar check
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In this study, we report experimental results on the structural and magnetic properties of epitaxial Fe3Si films grown on GaAs(0 0 1) by co-evaporation. X-ray reflectivity shows that relatively smooth interfaces are obtained (roughness ˜0.7 nm for the Fe3Si/GaAs interface), while SQUID magnetometry yields a magnetic moment of 0.9µB/atom at room temperature, close to the bulk value. From magneto-optic Kerr effect measurements the cubic anisotropy constant was estimated as K1=3.1×104 erg/cm3. The electrical transport properties were also investigated by I-V and photoexcitation measurements, which show a Schottky behaviour (with a barrier height of 0.51 eV) and that spin detection is possible in this system. © 2004 Elsevier B.V. All rights reserved.