Electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure: n-CdCr2Se4 / AlGaAs / GaAs
Ημερομηνία
2003Συγγραφέας
Jonker, B. T.Hanbicki, A. T.
Kioseoglou, G.
Li, C. H.
Stroud, R. M.
Sullivan, J. M.
Erwin, S. C.
Lüpke, G.
Zhao, H. B.
Ren, Y. H.
Sun, B.
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Mallory, R.
Yasar, M.
Petrou, Athos Chariton
Source
Digests of the Intermag ConferenceIntermag 2003: International Magnetics Conference
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Εμφάνιση πλήρους εγγραφήςΕπιτομή
The electrical spin injection and band offsets in an n-type ferromagnetic semiconductor heterostructure were discussed. The electrical spin injection from spin-LED structures showed defect-dominated electroluminescence. The analysis showed that the addition of a ZnSe interlayer provides a smaller conduction band offset in CdCr2Se4/ZnSe/(AlGa)As heterostructure.