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Photothermal radiometric measurements on metal contaminated silicon wafers

dc.contributor.authorKalli, Kyriacosen
dc.contributor.authorOthonos, Andreas S.en
dc.contributor.authorChristofides, Constantinosen
dc.contributor.authorF Tardiffen
dc.creatorKalli, Kyriacosen
dc.creatorOthonos, Andreas S.en
dc.creatorChristofides, Constantinosen
dc.creatorF Tardiffen
dc.date.accessioned2019-12-02T15:30:41Z
dc.date.available2019-12-02T15:30:41Z
dc.date.issued1999
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58763
dc.description.abstractPhotothermal radiometric measurements were performed on metal contaminated silicon wafers. Data were collected over modulation frequencies ranging from 0.1 to 100kHz, with a Kr-Ar ion laser used as the excitation source. The sensitivity of this technique to different forms of metallic contamination is examined. A qualitative comparison is made between theory and experiment.en
dc.sourceAIP Conference Proceedingsen
dc.titlePhotothermal radiometric measurements on metal contaminated silicon wafersen
dc.typeinfo:eu-repo/semantics/article
dc.description.volume463
dc.description.issue1
dc.description.startingpage386
dc.description.endingpage388
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.contributor.orcidOthonos, Andreas S. [0000-0003-0016-9116]
dc.contributor.orcidChristofides, Constantinos [0000-0002-4020-4660]
dc.contributor.orcidKalli, Kyriacos [0000-0003-4541-092X]
dc.gnosis.orcid0000-0003-0016-9116
dc.gnosis.orcid0000-0002-4020-4660
dc.gnosis.orcid0000-0003-4541-092X


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