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Electrical determination of the spin relaxation time of photoexcited electrons in GaAs

dc.contributor.authorKurebayashi, H.en
dc.contributor.authorTrypiniotis, Theodossisen
dc.contributor.authorLee, K.en
dc.contributor.authorEaston, S.en
dc.contributor.authorIonescu, A.en
dc.contributor.authorFarrer, I.en
dc.contributor.authorRitchie, D. A.en
dc.contributor.authorBland, J. A. C.en
dc.contributor.authorBarnes, C. H. W.en
dc.creatorKurebayashi, H.en
dc.creatorTrypiniotis, Theodossisen
dc.creatorLee, K.en
dc.creatorEaston, S.en
dc.creatorIonescu, A.en
dc.creatorFarrer, I.en
dc.creatorRitchie, D. A.en
dc.creatorBland, J. A. C.en
dc.creatorBarnes, C. H. W.en
dc.date.accessioned2019-12-02T15:31:37Z
dc.date.available2019-12-02T15:31:37Z
dc.date.issued2010
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/58806
dc.description.abstractSpin-dependent transport for photoexcited electrons in an epitaxial Fe/GaAs interface was characterized from 5 to 300 K. The presence of spin-dependent transport was confirmed at all the measured temperatures and the spin polarization across the interface is found to increase with decreasing temperature. A time-of-flight-type model based on the Dyakonov-Perel (DP) spin relaxation mechanism was employed to explain the temperature dependence, providing that the estimated spin relaxation time in GaAs is 62 ps at 5 K. This short spin relaxation time can be explained by the stronger efficiency of the DP mechanism for hot-electrons. © 2010 American Institute of Physics.en
dc.sourceApplied Physics Lettersen
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-74549157150&doi=10.1063%2f1.3291066&partnerID=40&md5=6a9c6cd995f5f6bae17f2e62fc5ffed8
dc.subjectSpin dynamicsen
dc.subjectTemperature dependenceen
dc.subjectTime of flighten
dc.subjectRelaxation processesen
dc.subjectGallium alloysen
dc.subjectGallium arsenideen
dc.subjectSemiconducting galliumen
dc.subjectGaAsen
dc.subjectSpin relaxationen
dc.subjectPhotoexcited electronsen
dc.subjectDynamic positioningen
dc.subjectEpitaxial Fe/GaAsen
dc.subjectHot electronsen
dc.subjectModel-baseden
dc.subjectPercolation (solid state)en
dc.subjectSpin dependent transporten
dc.subjectSpin relaxation timeen
dc.titleElectrical determination of the spin relaxation time of photoexcited electrons in GaAsen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1063/1.3291066
dc.description.volume96
dc.description.issue2
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.description.notes<p>Cited By :13</p>en
dc.source.abbreviationAppl.Phys.Lett.en


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