Browsing by Subject "Tin"
Now showing items 21-28 of 28
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Article
Surface passivation and conversion of SnO2 to SnS2 nanowires
(2015)SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
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Article
Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition
(2009)Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
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Article
Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition
(2009)Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
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Article
Synthesis, structural characterization and in vitro inhibitory studies against human breast cancer of the bis-(2,6-di-tert-butylphenol)tin(iv) dichloride and its complexes
(2012)Four new organotin(iv) complexes of bis-(2,6-di-tert-butylphenol)tin(iv) dichloride [(tert-Bu-)2(HO-Ph)]2SnCl2 (1) with the heterocyclic thioamides 2-mercapto-pyrimidine (PMTH), 2-mercapto-4-methyl- pyrimidine (MPMTH), ...
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Article
A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...
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Article
A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...
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Article
Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation
(2009)We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...
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Article
Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation
(2009)We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...