Silicon nanowires were grown along the [111] direction on Si(001) by the vapor-liquid-solid mechanism using 1 nm Au as a catalyst. They were subsequently oxidized at 900 °C for 60 min, 120 min and 180 min, which lead to ...

We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated ...