Browsing by Author "Bryant, A."
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Article
Magnetotransport of delta-doped In0.57Ga0.43As on InP(001) grown between 390 and 575°C by molecular beam epitaxy
Zervos, Matthew; Bryant, A.; Elliott, M.; Beck, M.; Ilegems, M. (1998)Silicon (Si) delta- (δ-) doped In0.53Ga0.47As layers were grown by molecular beam epitaxy on InP(001) substrates between 390°C and 575°C. Subbands formed at the δ layer were examined with Hall and Shubnikov-de Haas effect ...