Πλοήγηση ανά Συγγραφέα "Hogan, T."

Αποτελέσματα 1-4 από 4

    • Article  

      A2Bi8Se13 (A = Rb, Cs), CsBi3.67Se6, and BaBi2Se4: New ternary semiconducting bismuth selenides 

      Iordanidis, L.; Brazis, P. W.; Kyratsi, Theodora; Ireland, J.; Lane, M.; Kannewurf, C. R.; Chen, W.; Dyck, J. S.; Uher, C.; Ghelani, N. A.; Hogan, T.; Kanatzidis, M. G. (2001)
      Rb2Bi8Se13 (I), Cs2Bi8Se13 (II), CsBi3.67Se6 (III), and BaBi2Se4 (IV) were synthesized by direct combination reactions of the A/Se (A = Rb, Cs, Ba) and Bi2Se3 at ≥650 °C. Their structures were determined by single-crystal ...
    • Article  

      CsMBi3Te6 and CsM2Bi3Te7 (M = Pb, Sn): New thermoelectric compounds with low-dimensional structures 

      Hsu, K. F.; Chung, D. Y.; Lal, S.; Mrotzek, A.; Kyratsi, Theodora; Hogan, T.; Kanatzidis, M. G. (2002)
      The new materials CsPbBi3Te6 nad CsPb2Bi3Te7 were discovered through reactions of CsBi4Te6 with PbTe, whereas the isostructural materials CsSnBi3Te6 and CsSn2Bi3Te7 were discovered through corresponding reactions with SnTe. ...
    • Conference Object  

      Synthesis, crystal structure and thermoelectric properties of β-K 2Bi 8Se 13 solid solutions 

      Kyratsi, Theodora; Chung, D. Y.; Dyck, J. S.; Uher, C.; Lal, S.; Loo, S.; Hogan, T.; Ireland, J.; Kannewurf, C. R.; Hatzikraniotis, E.; Paraskevopoulos, K. M.; Kanatzidis, M. G. (Affiliation: Department of Chemistry, Michigan State University, East Lansing, MI 48824, United StatesAffiliation: Department of Physics, University of Michigan, Ann Arbor, MI 48109, United StatesAffiliation: Department of Electrical Engineering, Michigan State University, East Lansing, MI 48824, United StatesAffiliation: Department of Electrical Engineering, Northwestern University, Evanston, IL 60208, United StatesAffiliation: Department of Physics, Aristotle University of Thessaloniki, 54006 Thessaloniki, GreeceCorrespondence Address: Kyratsi, T.Department of Chemistry, Michigan State University, East Lansing, MI 48824, United States, 2003)
      Solid solution series of the type K 2Bi 8-xSb xSe 13, K 2-xRb xBi 8Se 13 as well as K 2B 18Se 13-xS x were prepared and the distribution of the atoms (Bi/Sb, K/Rb and Se/S) on different crystallographic sites, the band ...
    • Conference Object  

      Thermoelectric properties of K 2Bi 8Se 13-xS x solid solutions 

      Kyratsi, Theodora; Lal, S.; Hogan, T.; Kanatzidis, M. G. (Affiliation: Department of Chemistry, Michigan State University, East Lansing, MI 48824, United StatesAffiliation: Department of Mechanical and Manufacturing Engineering, School of Engineering, University of Cyprus, Nicosia, CyprusAffiliation: Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, United StatesCorrespondence Address: Kyratsi, T.Department of Chemistry, Michigan State University, East Lansing, MI 48824, United States, 2006)
      Derivatives of β-K 2Bi 8Se 13 are an interesting series of materials for thermoelectric investigations due to their very low thermal conductivity and highly anisotropic electrical properties. Up to now substitutions on the ...