• Article  

      Electric control of the spin Hall effect by intervalley transitions 

      Okamoto, N.; Kurebayashi, H.; Trypiniotis, Theodossis; Farrer, I.; Ritchie, D. A.; Saitoh, E.; Sinova, J.; Mašek, J.; Jungwirth, T.; Barnes, C. H. W. (2014)
      Controlling spin-related material properties by electronic means is a key step towards future spintronic technologies. The spin Hall effect (SHE) has become increasingly important for generating, detecting and using spin ...
    • Article  

      Electrical determination of the spin relaxation time of photoexcited electrons in GaAs 

      Kurebayashi, H.; Trypiniotis, Theodossis; Lee, K.; Easton, S.; Ionescu, A.; Farrer, I.; Ritchie, D. A.; Bland, J. A. C.; Barnes, C. H. W. (2010)
      Spin-dependent transport for photoexcited electrons in an epitaxial Fe/GaAs interface was characterized from 5 to 300 K. The presence of spin-dependent transport was confirmed at all the measured temperatures and the spin ...
    • Article  

      Spin current depolarization under high electric fields in undoped InGaAs 

      Okamoto, N.; Kurebayashi, H.; Harii, K.; Kajiwara, Y.; Beere, H.; Farrer, I.; Trypiniotis, Theodossis; Ando, K.; Ritchie, D. A.; Barnes, C. H. W.; Saitoh, E. (2011)
      Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure ...
    • Article  

      Spin transport in germanium at room temperature 

      Shen, C.; Trypiniotis, Theodossis; Lee, K. Y.; Holmes, S. N.; Mansell, R.; Husain, M.; Shah, V.; Li, X. V.; Kurebayashi, H.; Farrer, I.; De Groot, C. H.; Leadley, D. R.; Bell, G.; Parker, E. H. C.; Whall, T.; Ritchie, D. A.; Barnes, C. H. W. (2010)
      Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent ...