Browsing by Author "Travlos, A."
Now showing items 1-6 of 6
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Article
Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Othonos, Andreas S.; Travlos, A.; Luculescu, C. R. (2015)Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
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Article
Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Travlos, A.; Luculescu, C. R. (2015)Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
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Article
Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting
Zervos, Matthew; Othonos, Andreas S.; Gianneta, V.; Travlos, A.; Nassiopoulou, Androula Galiouna (2015)Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...
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Article
Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting
Zervos, Matthew; Othonos, A.; Gianneta, V.; Travlos, A.; Nassiopoulou, A. G. (2015)Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...
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Article
Sulfur doping of M/In2O3 (M=Al,W) nanowires with room temperature near infra red emission
Zervos, Matthew; Mihailescu, C.; Giapintzakis, Ioannis; Othonos, Andreas S.; Travlos, A. (2015)We have investigated the growth of Al doped In2O3 nanowires via the vapor-liquid-solid mechanism at 800°C using Au as a catalyst. We find that the Al is not incorporated into the cubic bixbyite crystal structure of In2O3 ...
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Article
Sulfur doping of M/In2O3 (M=Al,W) nanowires with room temperature near infra red emission
Zervos, Matthew; Mihailescu, C.; Giapintzakis, John; Othonos, A.; Travlos, A. (2015)We have investigated the growth of Al doped In2O3 nanowires via the vapor-liquid-solid mechanism at 800°C using Au as a catalyst. We find that the Al is not incorporated into the cubic bixbyite crystal structure of In2O3 ...