Browsing by Author "van Driel, H. M."
Now showing items 1-3 of 3
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Free carrier and lattice-heating-induced changes to the reflectivity of epitaxial GeSi alloys following picosecond pulse excitation
Othonos, Andreas S.; van Driel, H. M.; Young, J. F.; Baribeau, J. -M (1992)Transient reflectivity characteristics for epitaxial Ge1-xSix (x=0, 0.05, 0.1, 0.25) alloys have been measured at λ = 0.575μm, using 2ps pump and probe pulses with photogenerated carrier densities up to 1019 cm-3. For all ...
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Article
Hot-carrier dynamics in Ge on single picosecond timescales: Comparing Raman and reflectivity experiments with a self-consistent kinetic model
Othonos, Andreas S.; van Driel, H. M.; Young, J. F.; Kelly, P. J. (1989)Through comparisons of picosecond Raman and transient reflection experiments with a comprehensive kinetic model of photo-excited carrier and lattice dynamics in Ge, we demonstrate the ability of these techniques to probe ...
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Article
Picosecond raman scattering from non-equilibrium collective modes in diamond and zincblende semiconductors
Young, J. F.; Wan, K.; Lockwood, D. J.; Baribeau, J. -M; Othonos, Andreas S.; van Driel, H. M. (1988)Picosecond Raman scattering is a useful probe of non-equilibrium photo-excited carrier and phonon dynamics in group III-V and group IV semiconductors. In group III-V materials, time-resolved Raman scattering is used to ...