Browsing by Subject "Annealing"
Now showing items 1-5 of 5
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Article
Efficient spin detection across the hybrid Co/GaAs schottky interface
(2007)The electron spin detection efficiency was studied across Co/GaAs structures using photoexcitation techniques. Two sets of samples were prepared where the substrate surface was pretreated by annealing prior to growth for ...
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Article
Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing
(2006)A study of arsenic ion-implanted polycrystalline silicon films before and after annealing at various temperatures has been performed using spectroscopic ellipsometry in the ultraviolet to the visible spectral region. Using ...
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Article
Femtosecond carrier dynamics in implanted and highly annealed polycrystalline silicon
(2006)We have studied the ultrafast optical response of highly implanted and highly annealed polycrystalline silicon films using 400 nm ultrashort amplified pulses with fluence ranging between 8 mJ cm-2 to 56 mJ cm -2. Transient ...
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Spatial dependence of ultrafast carrier recombination centers of phosphorus-implanted and annealed silicon wafers
(2002)In this letter, the spatial dependence of the carrier recombination centers induced in phosphorus-implanted and annealed silicon wafers have been examined. Ultrafast time-resolved reflectivity measurements of a set of ...
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Article
Thermoelectric properties of Bi0.5Sb1.5Te3 thin films grown by pulsed laser deposition
(2015)We report on the pulsed laser deposition of p-type Bi0.5Sb1.5Te3 thin films onto fused silica substrates by ablation of dense targets of Bi0.5Sb1.5Te3 with an excess of 1 wt% Te. We investigated the effect of film thickness, ...