Browsing by Subject "Auger recombination"
Now showing items 1-6 of 6
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Article
Carrier dynamics in InS nanowires grown via chemical vapor deposition
(2010)Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...
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Article
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Article
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Article
Femtosecond carrier dynamics in In 2O 3 nanocrystals
(2009)We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
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Article
Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation
(2009)We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...
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Article
Ultrafast time-resolved spectroscopy of In2 O3 nanowires
(2009)Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...