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Browsing by Subject "Auger recombination"

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    • Article  

      Carrier dynamics in InS nanowires grown via chemical vapor deposition 

      Othonos, A.; Zervos, Matthew (2010)
      Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...

    • Article  

      Carrier dynamics in InS nanowires grown via chemical vapor deposition 

      Othonos, Andreas S.; Zervos, Matthew (2010)
      Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...

    • Article  

      Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition 

      Othonos, A.; Zervos, Matthew (2009)
      Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...

    • Article  

      Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition 

      Othonos, Andreas S.; Zervos, Matthew (2009)
      Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...

    • Article  

      Concentration and excitation effects on the exciton dynamics of poly(3-hexylthiophene)/PbS quantum dot blend films 

      Tsokkou, Demetra; Itskos, Grigorios; Choulis, Stelios A.; Yarema, M.; Heiss, W.; Othonos, Andreas S. (2013)
      The dynamics of photoexcitations in hybrid blends of poly(3-hexylthiophene) (P3HT) conjugated polymer donor and oleic-acid capped lead sulfide (PbS) quantum dot (QD) acceptors of different concentrations - for light ...

    • Article  

      Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers 

      Tsokkou, Demetra; Othonos, Andreas S.; Zervos, Matthew (2009)
      Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...

    • Article  

      Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers 

      Tsokkou, D.; Othonos, A.; Zervos, Matthew (2009)
      Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...

    • Article  

      Femtosecond carrier dynamics in In 2O 3 nanocrystals 

      Othonos, A.; Zervos, Matthew; Tsokkou, D. (2009)
      We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...

    • Article  

      Femtosecond carrier dynamics in In 2O 3 nanocrystals 

      Othonos, Andreas S.; Zervos, Matthew; Tsokkou, Demetra (2009)
      We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...

    • Article  

      Surface-related states in oxidized silicon nanocrystals enhance carrier relaxation and inhibit auger recombination 

      Othonos, Andreas S.; Lioudakis, Emmanouil E.; Nassiopoulou, Androula Galiouna (2008)
      We have studied ultrafast carrier dynamics in oxidized silicon nanocrystals (NCs) and the role that surface-related states play in the various relaxation mechanisms over a broad range of photon excitation energy corresponding ...

    • Article  

      Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation 

      Othonos, A.; Zervos, Matthew; Tsokkou, D. (2009)
      We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...

    • Article  

      Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation 

      Othonos, Andreas S.; Zervos, Matthew; Tsokkou, Demetra (2009)
      We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...

    • Article  

      Ultrafast time-resolved spectroscopy of In2 O3 nanowires 

      Tsokkou, Demetra; Othonos, Andreas S.; Zervos, Matthew (2009)
      Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...

    • Article  

      Ultrafast time-resolved spectroscopy of In2 O3 nanowires 

      Tsokkou, D.; Othonos, A.; Zervos, Matthew (2009)
      Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...

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