Browsing by Subject "Augers"
Now showing items 1-9 of 9
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Article
Carrier dynamics in InS nanowires grown via chemical vapor deposition
(2010)Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...
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Article
Carrier dynamics in InS nanowires grown via chemical vapor deposition
(2010)Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...
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Article
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Article
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Article
Femtosecond carrier dynamics in In 2O 3 nanocrystals
(2009)We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
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Article
Femtosecond carrier dynamics in In 2O 3 nanocrystals
(2009)We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
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Article
Surface-related states in oxidized silicon nanocrystals enhance carrier relaxation and inhibit auger recombination
(2008)We have studied ultrafast carrier dynamics in oxidized silicon nanocrystals (NCs) and the role that surface-related states play in the various relaxation mechanisms over a broad range of photon excitation energy corresponding ...
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Article
Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation
(2009)We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...
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Article
Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation
(2009)We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...