Browsing by Subject "Band edge"

Article

Carrier dynamics in Β-Ga2O3 nanowires

Othonos, A.; Zervos, Matthew; Christofides, C. (2010)

Carrier dynamics have been investigated in Β-Ga2O 3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting ...

Article

Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition

Othonos, A.; Zervos, Matthew (2009)

Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...

Article

Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers

Tsokkou, D.; Othonos, A.; Zervos, Matthew (2009)

Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...

Article

Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation

Othonos, A.; Zervos, Matthew; Tsokkou, D. (2009)

We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...

Article

Ultrafast time-resolved spectroscopy of In2 O3 nanowires

Tsokkou, D.; Othonos, A.; Zervos, Matthew (2009)

Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...