Browsing by Subject "Band structure"
Now showing items 1-8 of 8
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Ab-initio electronic structure calculations and properties of [SixSn1 − x]3N4 ternary nitrides
(2016)We carry out ab initio electronic structure calculations of (SixSn1 − x)3N4 using density functional theory with projector augmented-wave potentials under the generalized gradient approximation. We find that the energetically ...
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Large ultrafast optical nonlinearities in As-rich GaAs
(1994)The measurement of large Ultrafast bandgap-resonant optical nonlinearities in As-rich samples of GaAs that have been grown at low temperatures is reported. Light-induced refractive index changes of magnitude greater than ...
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Article
Minority-spin band parameters in a NiMnSb thin film determined by spectral conductivity
(2004)NiMnSb is expected to be a ferromagnetic half metal, an expectation that is based in part on band structure calculations. Here we report optical conductivity studies of the band structure for a film prepared by pulsed laser ...
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Article
Pulsed-laser deposition of NiMnSb thin films at moderate temperatures
(2002)Thin films of the half-Heusler alloy NiMnSb, which is predicted by band-structure calculations to be a half-metallic ferromagnet, were grown on various substrates (Si and InAs) using pulsed-laser deposition. The growth ...
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Article
Time-resolved ultrafast carrier dynamics in as-grown nanocrystalline silicon films: The effect of film thickness and grain boundaries
(2008)In this letter, we have studied transient photoinduced absorption in as-grown nanocrystallinc silicon films with thickness varied from 5 to 30 nm. Effects of quantum confinement (QC) in z-direction and grain boundary ...
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Article
Ultrafast carrier dynamics in Inx Ga1-x N (0001) epilayers: Effects of high fluence excitation
(2006)Ultrafast carrier dynamics in Inx Ga1-x N (0001) epilayers were investigated, using femtosecond transient differential transmission and reflection measurements for x=0.07, 0.15, and 0.33, over a fluence range of 1-12 mJ ...
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Article
Zn3N2nanowires: Growth, properties and oxidation
(2013)Zinc nitride (Zn3N2) nanowires (NWs) with diameters of 50 to 100 nm and a cubic crystal structure have been grown on 1 nm Au/Al2O3via the reaction of Zn with NH3including H2between 500°C and 600°C. These exhibited an optical ...
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Article
Zn3N2nanowires: Growth, properties and oxidation
(2013)Zinc nitride (Zn3N2) nanowires (NWs) with diameters of 50 to 100 nm and a cubic crystal structure have been grown on 1 nm Au/Al2O3via the reaction of Zn with NH3including H2between 500°C and 600°C. These exhibited an optical ...