• Article  

      C-axis josephson tunneling between YBa2Cu3O7 − δ and Pb: Direct evidence for mixed order parameter symmetry in a high- Tc superconductor 

      Kouznetsov, K. A.; Sun, A. G.; Chen, B.; Katz, A. S.; Bahcall, S. R.; Clarke, J.; Dynes, R. C.; Gajewski, D. A.; Han, S. H.; Maple, M. B.; Giapintzakis, John; Kim, J.-T.; Ginsberg, T. M. (1997)
      C-axis Josephson tunneling experiments in which a conventional superconductor (Pb) is deposited across a single twin boundary of a YBa2Cu3O7 − δ (YBCO) crystal. We measure the critical current as a function of the magnitude ...
    • Conference Object  

      Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique 

      Kyratsi, Theodora; Chung, D. Y.; Choi, K.-S.; Dick, J. S.; Chen, W.; Uher, C.; Kanatzidis, M. (Affiliation: Dept. of Chemistry, Center of Fundamental Mat. Research, Michigan State University, East Lansing, MI 48824-1322, United StatesCorrespondence Address: Kyratsi, T.Dept. of Chemistry, Center of Fundamental Mat. Research, Michigan State University, East Lansing, MI 48824-1322, United States, 2001)
      Our exploratory research in new thermoelectric materials has identified the ternary and quaternary bismuth chalcogenides β-K2Bi8Se13, K2.5Bi8.5Se14 and K1+xPb4-2xBi7+xSe15, to have promising properties for thermoelectric ...
    • Article  

      Highly anisotropic crystal growth and thermoelectric properties of K 2Bi 8-xSb xSe 13 solid solutions: Band gap anomaly at low x 

      Kyratsi, Theodora; Dyck, J. S.; Chen, W.; Chung, D. Y.; Uher, C.; Paraskevopoulos, K. M.; Kanatzidis, M. G. (2002)
      The thermoelectric properties of solid solutions of the type β-K 2Bi 8-xSb xSe 13 (0<x<8) were studied with respect to thermal behavior, band gap variation, and charge transport properties as a function of x. At x values ...
    • Article  

      InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates 

      Zervos, Matthew; Xenogianni, C.; Deligeorgis, G.; Androulidaki, M.; Savvidis, P. G.; Hatzopoulos, Z.; Pelekanos, N. T. (2006)
      InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
    • Conference Object  

      Initial assessment of the thermoelectric properties for the mixed system K2-xRbxBi8Se13 

      Ireland, J. R.; Kyratsi, Theodora; Kanatzidis, M. G.; Kannewurf, C. R. (Affiliation: Dept. of Elec. and Comp. Engineering, Northwestern University, Evanston, IL 60208-3118, United StatesCorrespondence Address: Ireland, J.R.Dept. of Elec. and Comp. Engineering, Northwestern University, Evanston, IL 60208-3118, United States, 2002)
      In previous studies we have investigated the thermoelectric properties of undoped and doped compositions of β-K2Bi8Se13. The attempt to substitute Rb for K resulted in a different structure type, but with potentially useful ...
    • Conference Object  

      Particle simulation of crystal growth and settling under variable gravity 

      Gatsonis, N. A.; Ongewe, B.; Alexandrou, Andreas N.; Jr, A. Sacco (American Institute of Aeronautics and Astronautics Inc, AIAA, 1999)
      A model that describes crystal growth and motion is presented. The model is based on concept of the direct simulation Monte Carlo and molecular dynamics methods and includes spherical crystal particles, nutrients species ...