Browsing by Subject "ELEVATED-TEMPERATURES"
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Article
Ultrafast dynamics in phosphorus-implanted silicon wafers: The effects of annealing
(2002)Carrier relaxation in phosphorus-implanted silicon wafers (10(16) P+/cm(2)) annealed at different temperatures ranging from 350 to 1100 degreesC is investigated by near-infrared ultrafast time-resolved reflectivity ...