• Conference Object  

      Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique 

      Kyratsi, Theodora; Chung, D. Y.; Choi, K.-S.; Dick, J. S.; Chen, W.; Uher, C.; Kanatzidis, M. (Affiliation: Dept. of Chemistry, Center of Fundamental Mat. Research, Michigan State University, East Lansing, MI 48824-1322, United StatesCorrespondence Address: Kyratsi, T.Dept. of Chemistry, Center of Fundamental Mat. Research, Michigan State University, East Lansing, MI 48824-1322, United States, 2001)
      Our exploratory research in new thermoelectric materials has identified the ternary and quaternary bismuth chalcogenides β-K2Bi8Se13, K2.5Bi8.5Se14 and K1+xPb4-2xBi7+xSe15, to have promising properties for thermoelectric ...
    • Article  

      Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation 

      Zervos, Matthew; Pelekanos, N. T. (2008)
      A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...
    • Article  

      Highly anisotropic crystal growth and thermoelectric properties of K 2Bi 8-xSb xSe 13 solid solutions: Band gap anomaly at low x 

      Kyratsi, Theodora; Dyck, J. S.; Chen, W.; Chung, D. Y.; Uher, C.; Paraskevopoulos, K. M.; Kanatzidis, M. G. (2002)
      The thermoelectric properties of solid solutions of the type β-K 2Bi 8-xSb xSe 13 (0<x<8) were studied with respect to thermal behavior, band gap variation, and charge transport properties as a function of x. At x values ...
    • Article  

      InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates 

      Zervos, Matthew; Xenogianni, C.; Deligeorgis, G.; Androulidaki, M.; Savvidis, P. G.; Hatzopoulos, Z.; Pelekanos, N. T. (2006)
      InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
    • Article  

      La0.95Sr0.05Coo3: An efficient room-temperature thermoelectric oxide 

      Andrbulakis, J.; Migiakis, P.; Giapintzakis, John (2004)
      Electric resistivity, thermal conductivity, and the thermopower of polycrystalline Sr-doped LaCoO3 with composition La 0.9Sr0.5CoO3 were measured. The crystal structure of the synthesized powders was determined by x-ray ...
    • Article  

      Large positive magnetoresistance in nonstoichiometric NiMnSb thin films on silicon 

      Branford, W. R.; Clowes, S. K.; Syed, M. H.; Bugoslavsky, Y. V.; Gardelis, S.; Androulakis, J.; Giapintzakis, John; Grigorescu, C. E. A.; Berenov, A. V.; Roy, S. B.; Cohen, L. F. (2004)
      The transport properties of pulsed-laser-deposited NiMnSb films on silicon as a function of film thickness were discussed. It was found that a low-temperature upturn was observed in the resistivity for film thicknesses of ...
    • Article  

      Magnetoresistance in LaNi1-xCoxO3 (0.3≤x≤0.6) 

      Androulakis, J.; Giapintzakis, John (2010)
      We report on a detailed study of the electrical resistivity and the magnetoresistance of the metallic members of the LaNi1-xCoxO3 series with 0.3≤x≤0.6. The low-temperature resistivity of the compounds with 0.3≤x≤0.5 ...
    • Article  

      Modification of thermoelectric properties using insertion techniques 

      Hatzikraniotis, E.; Kyratsi, Theodora; Chrissafis, K.; Paraskevopoulos, K. M. (1999)
      In this work is presented the application insertion techniques for the modification of the performance of thermoelectric materials. The results indicate that in cases as in Bi2Se3 compounds where insertion of foreign species ...
    • Article  

      Realization of La2MnVO6: Search for half-metallic antiferromagnetism? 

      Androulakis, J.; Katsarakis, N.; Giapintzakis, John (2002)
      Single-phase polycrystalline La2MnVO6 samples were synthesized by arc-melting and characterized by X-ray diffraction, magnetization and resistivity measurements. We find that the compound has cubic (space group Fm3̄m), ...
    • Article  

      Recent advances in spintronics. Half-metal ferromagnets: Their role in spintronics 

      Gardelis, S.; Androulakis, J.; Migiakis, P.; Giapintzakis, John (2004)
      A review of recent advances in spintronics is presented. We report the structural, magnetic, electrical and thermal properties of the ferromagnetic half-Heusler alloy NiMnSb grown by arcmelting. The bulk material is used ...
    • Article  

      Syntheses, crystal Structures and electronic Structures of new metal chalcoiodides Bi2CuSe3I and Bi6Cu3S10I 

      Liang, I.-C.; Bilc, D. I.; Manoli, M.; Chang, W.-Y.; Lin, W.-F.; Kyratsi, Theodora; Hsu, K. F. (2016)
      Two new metal chalcoiodides were synthesized by solid-state reactions at 400 °C. Crystal Data: Bi2CuSe3I, 1, monoclinic, C2/m, a=14.243(2) Å, b=4.1937(7) Å, c=14.647(2) Å, β=116.095(2)°, V=785.7(2) Å3, and Z=4
    • Article  

      Synthesis and physical properties of arc melted NiMnSb 

      Gardelis, S.; Androulakis, J.; Migiakis, P.; Giapintzakis, John; Clowes, S. K.; Bugoslavsky, Y.; Branford, W. R.; Miyoshi, Y.; Cohen, L. F. (2004)
      The synthesis and physical properties of arc melted NiMnSb were studied using X-ray diffraction analysis. It was observed that the half metallicity in NiMnSb is supported by the integer saturation magnetization value at 5 ...
    • Doctoral Thesis  Open Access

      Topological and conventional quantum matter in strong magnetic and electric fields : ground state thermodynamic and transport considerations 

      Konstantinou, Georgios N. (Πανεπιστήμιο Κύπρου, Σχολή Θετικών και Εφαρμοσμένων Επιστημών / University of Cyprus, Faculty of Pure and Applied Sciences, 2016-05)
      Η παρούσα διατριβή επικεντρώνεται στη μελέτη της θερμοδυναμικής ηλεκτρονικών συστημάτων (τοπολογικών ή συμβατικών) στην θεμελιώδη τους κατάσταση, όταν μερικές εξωτερικές παράμετροι μεταβάλλονται (π.χ. το πάχος μιας ...
    • Conference Object  

      Transport properties of the doped thermoelectric material K2Bi8-xSbxSe13 

      Brazis, P. W.; Ireland, J. R.; Lane, M. A.; Kyratsi, Theodora; Chung, D. Y.; Kanatzidis, M. G.; Kannewurf, C. R. (Affiliation: Dept. of Electrical and Comp. Eng., Northwestern University, Evanston, IL 60208-3118, United StatesCorrespondence Address: Brazis, P.W.Dept. of Electrical and Comp. Eng., Northwestern University, Evanston, IL 60208-3118, United States, 2001)
      The synthesis, physicochemical, spectroscopic, and structural characterization of the compound β-K2Bi8Se13 has been previously reported. The results indicated that this material should be investigated further for possible ...