Browsing by Subject "Electric power factor"

Now showing items 1-4 of 4

    • Conference Object  

      Doping studies of n-type CsBi4Te6 thermoelectric materials 

      Lane, M. A.; Ireland, J. R.; Brazis, P. W.; Kyratsi, Theodora; Chung, D. Y.; Kanatzidis, M. G.; Kannewurf, C. R. (Affiliation: Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United StatesCorrespondence Address: Lane, M.A.Dept of Electrical and Computer Eng., Northwestern University, Evanston, IL 60208, United States, 2001)
      We have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements ...
    • Article  

      Electronic Structure and Thermoelectric Properties of Pseudoquaternary Mg2Si1-x-ySnxGey-Based Materials 

      Kutorasinski, K.; Tobola, J.; Kaprzyk, S.; Khan, A. U.; Kyratsi, Theodora (2014)
      A theoretical study is presented on complex pseudoternary Bi-doped Mg2Si1-x-ySnxGey materials, which have recently been revealed to reach high thermoelectric figures of merit (ZT) of ∼1.4. Morphological characterization ...
    • Article  

      Highly anisotropic crystal growth and thermoelectric properties of K 2Bi 8-xSb xSe 13 solid solutions: Band gap anomaly at low x 

      Kyratsi, Theodora; Dyck, J. S.; Chen, W.; Chung, D. Y.; Uher, C.; Paraskevopoulos, K. M.; Kanatzidis, M. G. (2002)
      The thermoelectric properties of solid solutions of the type β-K 2Bi 8-xSb xSe 13 (0<x<8) were studied with respect to thermal behavior, band gap variation, and charge transport properties as a function of x. At x values ...
    • Article  

      Thermoelectric properties of Bi0.5Sb1.5Te3 thin films grown by pulsed laser deposition 

      Symeou, E.; Pervolaraki, M.; Mihailescu, C. N.; Athanasopoulos, G. I.; Papageorgiou, C.; Kyratsi, Theodora; Giapintzakis, John (2015)
      We report on the pulsed laser deposition of p-type Bi0.5Sb1.5Te3 thin films onto fused silica substrates by ablation of dense targets of Bi0.5Sb1.5Te3 with an excess of 1 wt% Te. We investigated the effect of film thickness, ...