Browsing by Subject "Electric wire"
Now showing items 1-8 of 8
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Article
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Article
Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation
(2008)A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...
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Article
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Article
Properties of the ubiquitous p-n junction in semiconductor nanowires
(2008)The properties of nanowires with built-in p-n junctions such as the energetic position of the one-dimensional sub-bands, charge distributions and band bending in equilibrium are determined by the self-consistent solution ...
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Article
Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition
(2009)Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
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Article
Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation
(2009)We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...
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Article
Ultrafast carrier relaxation in inn nanowires grown by reactive vapor transport
(2009)We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated ...
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Article
Ultrafast time-resolved spectroscopy of In2 O3 nanowires
(2009)Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...