Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...

A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...

Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...

Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...

We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...

We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated ...

Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...

In recent years, ZnSe nanowires have been widely investigated for their potential applications in optoelectronics. A typical room temperature photoluminescence spectrum of ZnSe nanowires grown by vapor-liquid-solid growth ...