• Article  

      InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates 

      Zervos, Matthew; Xenogianni, C.; Deligeorgis, G.; Androulidaki, M.; Savvidis, P. G.; Hatzopoulos, Z.; Pelekanos, N. T. (2006)
      InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
    • Conference Object  

      Tunable excitons in gated graphene systems 

      Djotyan, Anahit P.; Avetisyan, A. A.; Moulopoulos, Konstantinos (SPIE, 2017)
      We develop a microscopic theory of a strong electromagnetic radiation interaction with bilayer graphene where an energy gap is opened by a static electric field perpendicular to graphene planes. We show that an adiabatic ...