Browsing by Subject "Epitaxial growth"
Now showing items 1-7 of 7
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Article
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
(2011)Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
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Article
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
(2011)Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
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Article
Growth and structural characterization of orthorhombic and tetragonal SrCuO2 thin films
(2013)Epitaxial SrCuO2 thin films were grown on (0 0 1) SrTiO 3 substrates by pulsed laser deposition using a stoichiometric target. X-ray diffraction indicated that the SrCuO2 films undergo a structural phase transition as a ...
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Article
InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
(2006)InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
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Article
Large ultrafast optical nonlinearities in As-rich GaAs
(1994)The measurement of large Ultrafast bandgap-resonant optical nonlinearities in As-rich samples of GaAs that have been grown at low temperatures is reported. Light-induced refractive index changes of magnitude greater than ...
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Article
Magnetic and structural properties of stoichiometric thin Fe 3Si/GaAs(0 0 1) films
(2005)In this study, we report experimental results on the structural and magnetic properties of epitaxial Fe3Si films grown on GaAs(0 0 1) by co-evaporation. X-ray reflectivity shows that relatively smooth interfaces are obtained ...
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Article
Origin of the stabilization of the metastable tetragonal high-pressure phase in SrCuO2 thin films grown on SrTiO3 substrates by pulsed laser deposition
(2014)In this work we have systematically investigated the evolution of structure and stoichiometry in SrCuO2 films grown on TiO2-terminated SrTiO3 substrates as a function of the substrate temperature. Depending on the growth ...