• Article  

      Thermal oxidation and facet-formation mechanisms of Si nanowires 

      Kioseoglou, J.; Komninou, P.; Zervos, Matthew (2014)
      Silicon nanowires were grown along the [111] direction on Si(001) by the vapor-liquid-solid mechanism using 1 nm Au as a catalyst. They were subsequently oxidized at 900 °C for 60 min, 120 min and 180 min, which lead to ...