• Article  

      Direct conversion of light-polarization information into electric voltage using photoinduced inverse spin-Hall effect in Pt/GaAs hybrid structure: Spin photodetector 

      Ando, K.; Morikawa, M.; Trypiniotis, Theodossis; Fujikawa, Y.; Barnes, C. H. W.; Saitoh, E. (2010)
      The direct conversion of light-polarization information into electric voltage has been demonstrated using the photoinduced inverse spin-Hall effect in a Pt/GaAs hybrid structure. In the GaAs layer, spin-polarized carriers ...
    • Conference Object  

      Doping and alloying trends in new thermoelectric materials 

      Loo, S.; Lal, S.; Kyratsi, Theodora; Chung, D. Y.; Hsu, K. F.; Kanatzidis, M. G.; Hogan, T. P. (Affiliation: Dept. of Elec. and Comp. Engineering, Michigan State University, East Lansing, MI, United StatesCorrespondence Address: Loo, S.Dept. of Elec. and Comp. Engineering, Michigan State University, East Lansing, MI, United States, 2002)
      New thermoelectric bulk materials such as CsBi4Te6 have shown superior properties to traditional materials, however, optimal performance requires continuing investigations of doping and alloying trends. A recently modified ...
    • Article  

      Eight-Dimensional Quantum Hall Effect and "Octonions" 

      Bernevig, B. A.; Hu, J.; Toumbas, Nicolaos K.; Zhang, S. -C (2003)
      A generalization of the quantum Hall effect (QHE) where particles move in an eight-dimensional space under an SO(8) gauge field was constructed. A nonrelativistic Hamiltonian for particles moving on the S8 in the presence ...
    • Article  

      Hall effect in detwinned single crystals of YBa2(Cu1-xZnx)3O7-δ in the mixed state 

      Schegolev, A. I.; Giapintzakis, John; Manson, J. T.; Ginsberg, D. M.; Dumler, I. (1996)
      The effect of zinc doping on the mixed-state Hall effect in detwinned single crystals of YBa2Cu3O7-δ has been studied. We observe a sign reveral of the Hall effect in crystals with a superconducting transition temperature ...
    • Article  

      Hall effect study of magnetoresistive perovskite LaNi0.5Co 0.5O3 thin films 

      Androulakis, J.; Giapintzakis, John (2004)
      We report on the Hall effect of LaNi0.5Co0.5O 3 magnetoresistive thin films grown on Si(100) substrates by pulsed laser deposition. The Hall resistivity exhibits sign reversals both in varying magnetic field and temperature, ...
    • Article  

      Inhomogeneities and Effective Mass in Doped Mg2Si 

      Stefanaki, E. C.; Polymeris, G. S.; Ioannou, M.; Pavlidou, E.; Hatzikraniotis, E.; Kyratsi, Theodora; Paraskevopoulos, K. M. (2016)
      Magnesium silicide (Mg2Si)-based materials are promising candidates as thermoelectric components for mid-temperature range (500–900 K) energy conversion. Many different approaches for determining the parabolicity of the ...
    • Article  

      Large positive magnetoresistance in nonstoichiometric NiMnSb thin films on silicon 

      Branford, W. R.; Clowes, S. K.; Syed, M. H.; Bugoslavsky, Y. V.; Gardelis, S.; Androulakis, J.; Giapintzakis, John; Grigorescu, C. E. A.; Berenov, A. V.; Roy, S. B.; Cohen, L. F. (2004)
      The transport properties of pulsed-laser-deposited NiMnSb films on silicon as a function of film thickness were discussed. It was found that a low-temperature upturn was observed in the resistivity for film thicknesses of ...
    • Article  

      Light-induced mobility enhancement in delta-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) 

      Zervos, Matthew; Elliott, M.; Westwood, D. I. (1999)
      Persistent photoconductivity in 80 angstroms strained GaAs/In0.26Ga0.74As/GaAs quantum wells was investigated by measuring the Shubnikov de Haas and Hall effects at 4.2 K. The quantum wells were grown by molecular beam ...
    • Article  

      Photoinduced inverse spin-Hall effect: Conversion of light-polarization information into electric voltage 

      Ando, K.; Morikawa, M.; Trypiniotis, Theodossis; Fujikawa, Y.; Barnes, C. H. W.; Saitoh, E. (2010)
      The photoinduced inverse spin-Hall effect was observed in a Pt/GaAs hybrid structure. In the GaAs layer, circularly polarized light generates spin-polarized carriers, inducing a pure spin current into the Pt layer through ...
    • Article  

      Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN 

      Iliopoulos, E.; Zervos, Matthew; Adikimenakis, A.; Tsagaraki, K.; Georgakilas, A. (2006)
      Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by ...
    • Article  

      Sign reversal of the Hall effect in YBa2(Cu1-x)3O7-δ single crystals 

      Neiman, R. L.; Giapintzakis, John; Ginsberg, D. M.; Mochel, J. M. (1995)
      We have measured the in-plane Hall effect and in-plane resistivity of cobalt-doped YBa2Cu3O7-δ (YBCO) single-crystal samples. The concentration of cobalt ranged from 1 to 3%. As the applied field was varied, a sign reversal ...
    • Article  

      Spin current depolarization under high electric fields in undoped InGaAs 

      Okamoto, N.; Kurebayashi, H.; Harii, K.; Kajiwara, Y.; Beere, H.; Farrer, I.; Trypiniotis, Theodossis; Ando, K.; Ritchie, D. A.; Barnes, C. H. W.; Saitoh, E. (2011)
      Carrier spin polarization in In0.13Ga0.87 As under high electric fields has been investigated. The spin polarization was created by optical spin orientation techniques and the inverse spin-Hall effect was employed to measure ...
    • Article  

      Spin polarisation and anomalous Hall effect in NiMnSb films 

      Branford, W. R.; Roy, S. B.; Clowes, S. K.; Miyoshi, Y.; Bugoslavsky, Y. V.; Gardelis, S.; Giapintzakis, John; Cohen, L. F. (2004)
      NiMnSb has attracted a great deal of interest as a spin injector/detector in spintronic devices because it has a Curie temperature of 728 K and is predicted to be half-metallic (100% spin polarized). NiMnSb has been reported ...
    • Article  

      Thermoelectric properties and site-selective Rb+/K+ distribution in the K2-xRbxBi8Se13 series 

      Kyratsi, Theodora; Chung, D. Y.; Ireland, J. R.; Kannewurf, C. R.; Kanatzidis, M. G. (2003)
      β-K2Bi8Se13 possesses promising thermoelectric properties whereas Rb2Bi8Se13 does not. The formation of solid solutions between these two compounds was attempted to study the alkali metal distribution in the structure and ...
    • Doctoral Thesis  Open Access

      Topological and conventional quantum matter in strong magnetic and electric fields : ground state thermodynamic and transport considerations 

      Konstantinou, Georgios N. (Πανεπιστήμιο Κύπρου, Σχολή Θετικών και Εφαρμοσμένων Επιστημών / University of Cyprus, Faculty of Pure and Applied Sciences, 2016-05)
      Η παρούσα διατριβή επικεντρώνεται στη μελέτη της θερμοδυναμικής ηλεκτρονικών συστημάτων (τοπολογικών ή συμβατικών) στην θεμελιώδη τους κατάσταση, όταν μερικές εξωτερικές παράμετροι μεταβάλλονται (π.χ. το πάχος μιας ...