• Article  

      Gallium hydride vapor phase epitaxy of GaN nanowires 

      Zervos, Matthew; Othonos, Andreas S. (2011)
      Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
    • Article  

      Gallium hydride vapor phase epitaxy of GaN nanowires 

      Zervos, Matthew; Othonos, A. (2011)
      Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...